An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

Blog Article

This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures.Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures.Several results are reported which validate the Finger Cots model including DC-IV, pulsed-IV, scattering-parameter, and load-pull measurements.The model is then used to extrapolate the performance of the Food GaN HEMT to twice the operating temperature at which the model was validated.

This work could be useful for understanding and modeling GaN HEMTs in high-temperature environment applications.